MOCVD生长InGaAs/InGaAsP多量子阱光泵微碟激光器  

Optically Pumped InGaAs/InGaAsP MQW Microdisk Lasers Grown by MOCVD

作　　者：吴根柱[1] 张子莹[2] 任大翠[1] 张兴德[1] 

机构地区：[1]长春光机学院高功率半导体激光国家重点实验室,长春130022 [2]中国科学院半导体研究所国家光电子工艺中心,北京100083

出　　处：《Journal of Semiconductors》2001年第8期1057-1062,共6页半导体学报（英文版）

基　　金：兵器预研基金资助项目 (CHGJ-1998)

摘　　要：用 MOCVD方法生长了 In Ga As/ In Ga As P多量子阱微碟激光器外延片 ,用光刻、干法刻蚀和湿法刻蚀等现代化的微加工技术制备出直径 9.5μm的 In Ga As/ In Ga As P微碟激光器 ,并详细介绍了整个制备工艺过程 .在液氮温度下用氩离子激光器泵浦方式实现了低阈值光泵激射 ,测出单个微碟激光器的阈值光功率为 15 0μW,激射波长约为 1.6μm,品质因数 Q=80 0 ,激射光谱线宽为 2 nm,同时指出微碟激光器激射线宽比 F-The wafer of an InGaAs/InGaAsP multiple quantum wells (MQW) microdisk laser is grown by MOCVD,and a 9 5μm-diamete r InGaAs/InGaAsP MQW microdisk laser is made with modern mocrofabrication such as photolithography,dry etching,wet etching,etc.The fabrication process is desc ribed in detail.The InGaAs/InGaAsP MQW microdisk lasers are demonstrated,w hich are optically pumped with a 514 5nm Ar + laser beam a t li- quid nitrogen temperature.A threshold pump power of 150μW is obtained at pump wavelength of 514 5nm for a 9 5μm-diameter single disk,when the la sing emission wavelength is about 1 6μm,quality factor Q =800 and the emiss ion linewidth Δ λ =2nm.At the same time,it is pointed out that the linewidth of a microdisk laser is larger than that of the conventional semiconductor las ers is due to the former having a high Q -factor.

关 键 词：微碟激光器 多量子阱光泵 MOCVD生长 INGAAS/INGAASP 

分 类 号：TN248.4[电子电信—物理电子学]