Si(001)衬底上方形3C-SiC岛的LPCVD生长  

Growth of square shaped 3C-SiC islands on Si (001) substrates by LPCVD

作　　者：孙国胜[1] 罗木昌[1] 王雷[1] 朱世荣[1] 李晋闽[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所材料科学中心,北京100083

出　　处：《材料科学与工艺》2001年第3期253-255,共3页Materials Science and Technology

基　　金：国家重点基础研究专项经费资助项目 (G2 0 0 0 0 6 83) ;国家自然科学基金资助项目 ( 6 9736 0 2 0 )

摘　　要：Si衬底上SiC的异质外延生长深受关注 ,为了了解Si衬底上SiC的成核及长大过程 ,采用LPCVD方法在Si(0 0 1)衬底上生长出了方形 3C -SiC岛 ,利用Nomarski光学显微镜和扫描电子显微镜 (SEM )观察了SiC岛的形状、尺寸、密度和界面形貌 .结果表明 ,3C -SiC岛生长所需的Si原子来自反应气源 ,衬底上的Si原子不发生迁移或外扩散 。The heteroepitaxial growth of SiC on Si substrates has been paid much attention. To understand the nucleation and growth of SiC, square shaped SiC islands on Si (001) substrates were grown by LPCVD. The variation of surface morphology, size, density, and interface of SiC islands with Si/C ratio were investigated using Nomarski optical microscopy and scanning electron microscopy (SEM). It was shown that a smooth interface between 3C-SiC islands and Si substrate was observed with no formation of voids on Si substrate, indicating that no Si atoms out diffuse from the Si substrates. The concentration of C atoms in the precursor determines the growth process of SiC islands on Si (001) substrates.

关 键 词：方形3C-SiC LPCVD Si(001)衬底 半导体材料 碳化硅 硅衬底 异质外延生长 

分 类 号：TN304.24[电子电信—物理电子学]