InGaN/GaN量子阱动力学特征分析  

Study of Kinetic Property of InGaN/GaN Quantum Well

作　　者：刘志国[1] 顾海涛[1] 姚端正[1] 

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《武汉大学学报（理学版）》2001年第3期327-330,共4页Journal of Wuhan University:Natural Science Edition

基　　金：武汉市科委资助项目 ( 99110 9188)

摘　　要：采用单量子阱近似模型 ,对 In Ga N/ Ga N量子阱中的激子和电子在导带子带间跃迁的光吸收效应进行了理论分析和数值计算 .结果表明 ,In的含量对激子的能量影响较大 ,而量子阱宽度的变化也对激子的能量有着微调作用 ;导带中电子从基态至第一激发态跃迁的吸收峰比较明显 ;随着 In的含量增加 ,量子阱中的激子能量间隔增大 ,吸收谱线的峰值位置会发生蓝移 .The excitonic states and the intersubband optical absorption within the conduction band of quantum well have been studied theoretically by using an approximate model of single quantum well. The excitonic energy depends on the In component obviously and also on the width of the quantum well slightly. With the increase of In component the energy gaps between different excitonic states get bigger and the absorption peaks corresponding to the transition of states get shift. In conduction band electronic transition from the ground state to the first excited state is dominating

关 键 词：INGAN/GAN 量子阱 单量子阱近似模型 激子 半导体材料 光吸收效应 跃迁 

分 类 号：O471.1[理学—半导体物理]