直拉硅中氧化诱生层错研究进展  

Oxidation-induced Stacking Faults in CZ Silicon

作　　者：储佳[1] 杨德仁[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《材料导报》2001年第11期35-37,共3页Materials Reports

摘　　要：硅中的氧化诱生层错(OSF)是一种重要的工艺诱生缺陷,会对微电子器件产生重大影响,为提高硅片质量,要求对 OSF 有充分了解。综述了氧化诱生层错的研究进展,着重讨论了 OSF 的形成动力学、影响因素和检测方法,井指出:OSF 是一种由点缺陷行为决定的工艺诱生缺陷。Oxidation-induced Stacking Fault(OSF),which significantly affects the yield of microelectronic devices,is one of the dominant process-induced defects in Czochralski(CZ)silicon.It is very important to understand the characteristics of OSF for improving the quality of silicon wafers.This paper is an overview of OSFs in CZ-Si,with focus on the formation kinetics,influening factors and characterization methods of OSFs.It is believed that OSFs are determined by the behavior of point defects.

关 键 词：氧化诱生层错 直拉硅单晶 氧沉淀 半导体材料 缺陷 研究进展 动力学 

分 类 号：TN304.12[电子电信—物理电子学] O474[理学—半导体物理]