纳米器件的制备、表征及其应用  

CHARACTERIZATION AND DEVELOPMENT OF NANODEVICES

作　　者：王太宏[1] 赵继刚[1] 傅英[1] 李宏伟[1] 李卫[1] 王春花[1] 王振霖[1] 庞科[1] 刘淑琴[1] 符秀丽[1] 

机构地区：[1]中国科学院物理研究所,北京100080

出　　处：《物理》2002年第1期4-6,共3页Physics

基　　金：国家自然科学基金 (批准号 :6 992 5 410 1990 40 15 )

摘　　要：利用建立的常规光刻法的纳米加工工艺系统 ,研制碳纳米管晶体管、单电子晶体管和单电子晶体集成的纳米器件 .研制出了 90K的单电子晶体管 ,实现了两单电子晶体管的电容耦合集成。The fabrication of carbon nanotube field\|effect transistors, single\|electron transistors and their integrated circuits is reported. A single\|electron transistor has been successfully fabricated which can operate to 90K. Integration of two single\|electron transistors by capacitive coupling has been realized. Integration of a series of single\|electron transistors as well as a single\|electron transistor to a high electron mobility transistor has been achieved.

关 键 词：纳米器件 碳纳米管晶体管 单电子晶体管 纳米加工 制备 表征 

分 类 号：TB383[一般工业技术—材料科学与工程] TN32[电子电信—物理电子学]