高功率线性梯度折射率GaAs/AlGaAs单量子阱激光器  

High Power Linear GRIN-SCH-SQW GaAs/AlGaAs Lasers

作　　者：李忠辉[1] 王玉霞[1] 高欣[1] 李梅[1] 王玲[1] 张兴德[1] 

机构地区：[1]长春光学精密机械学院高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《发光学报》2002年第1期90-92,共3页Chinese Journal of Luminescence

摘　　要：应用MOVPE研制出梯度折射率分别限制GaAs/AlGaAs单量子阱激光器 ,室温单面连续输出光功率超过 5 0 0mW ,激射波长为 82 0 3nm 。The high power linear graded-index separate-confine-heterostructure signle-quantum-well GaAs/AlGaAs lasers have been grown and fabricated by MOVPE method.The maximum continue wave output optical power is up to 500mW for the lasers with 300μm wide stripe and 600μm cavity length.Threshold current is 137mA and emitting wavelength is 820.3nm at room temperature for continue wave operation.The measured vertical and parallel divergance angle are 4.5° and 38.2°,respectively.That is the advantages of graded-index separate-confine-heterostructure,thus it can get a higher efficiency in the application of pump solid lasers and fiber output.

关 键 词：梯度折射率 单量子阱激光器 砷化镓 GAAS/ALGAAS 输出功率 镓铝砷化合物 

分 类 号：TN248.4[电子电信—物理电子学]