静态随机存取存储器重离子单粒子翻转效应实验研究  

Experimental study on heavy ions single event upset effects in static random access memories

作　　者：贺朝会[1] 耿斌[1] 王燕萍[1] 杨海亮[1] 张正选[1] 陈晓华[1] 李国政[1] 路秀琴 符长波 赵葵 郭继宇 张新 

机构地区：[1]西北核技术研究所,陕西西安69信箱13分箱710024 [2]中国原子能研究院,北京102413

出　　处：《核电子学与探测技术》2002年第2期155-157,142,共4页Nuclear Electronics & Detection Technology

摘　　要：应用重离子加速器和 2 52 Cf源进行单粒子翻转效应实验 ,测量得到 IDT系列和 HM系列静态随机存取存储器的单粒子翻转重离子 L ET阈值为 4～ 8Me V· cm2 /mg,单粒子翻转饱和截面为 10 -7cm2 · bit-1量级 ,位单粒子翻转截面随集成度的提高而减小。实验结果表明 ,可以用 2 52Single Event Upset (SEU) effects experiments were done under heavy ion accelerator and 252 Cf source. The SEU heavy ion LET thresholds were between 4～8MeV·cm 2/mg and the saturation SEU cross sections were of the order of 10 -7 cm 2·bit -1 , for IDT and HM series Static Random Access Memories (SRAMs). The SEU cross sections per bit decreased as the integration of devices increased. It is suitable to measure the saturation SEU cross section for SRAMs under 252 Cf source, instead of heavy ion accelerator.

关 键 词：静态随机存取存储器 重离子加速器 单粒子翻转效应 C5252 锎252 辐射源 实验研究 

分 类 号：O571.33[理学—粒子物理与原子核物理] O572.21[理学—物理]