Growth of Cubic GaN by MOCVD at High Temperature  

立方相GaN的高温MOCVD生长(英文)

作　　者：付羿[1] 孙元平[1] 沈晓明[1] 李顺峰[1] 冯志宏[1] 段俐宏[1] 王海[1] 杨辉[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《Journal of Semiconductors》2002年第2期120-123,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目~~

摘　　要：High quality cubic GaN (c GaN) is grown by metalorganic vapor deposition (MOCVD) at an increased growth temperature of 900℃,with the growth rate of 1 6μm/h.The full width at half maximum (FWHM) of room temperature photoluminescence (PL) for the high temperature grown GaN film is 48meV.It is smaller than that of the sample grown at 830℃.In X ray diffraction (XRD) measurement,the high temperature grown GaN shows a (002) peak at 20° with a FWHM of 21′.It can be concluded that,although c GaN is of metastable phase,high growth temperature is still beneficial to the improvement in its crystal quality.The relationship between the growth rate and growth temperature is also discussed.利用 MOCVD技术在提高生长温度 (90 0℃ )下生长出了高质量的立方相 Ga N ,生长速度提高到 1.6μm / h.高温生长的 Ga N样品近带边峰室温光荧光半高宽为 4 8me V ,小于在 830℃下生长的 Ga N样品 .在ω扫描模式下 ,X射线衍射表明高温生长的 Ga N具有较小的 (0 0 2 )峰半高宽 2 1′.可以看出 ,尽管立方 Ga N是亚稳态 ,高生长温度仍然有利于其晶体质量的提高 .本文对 Ga

关 键 词：CUBIC GAN MOCVD 

分 类 号：TN304.23[电子电信—物理电子学]