非晶硅薄膜的低温快速晶化及其结构分析  

Rapid crystallization of a-Si films at low temperatures and structure analyses of the crystallized films

作　　者：林揆训[1] 林璇英[1] 梁厚蕴[1] 池凌飞[1] 余楚迎[1] 黄创君[1] 

机构地区：[1]汕头大学物理系,汕头515063

出　　处：《物理学报》2002年第4期863-866,共4页Acta Physica Sinica

基　　金：国家重点基础研究发展规划项目 (批准号 :G2 0 0 0 0 2 82 0 8)~~

摘　　要：在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火 10min .退火温度为 5 0 0℃时 ,薄膜表面形成了硅铝的混合相 ,非晶硅薄膜开始呈现了晶化现象 ;退火温度为 5 5 0℃时 ,大部分 (约 80 % )的非晶硅晶化为多晶硅 ,平均晶粒尺寸为 5 0 0nm ;退火温度为 6 0 0℃时 ,几乎所有的非晶硅都转化为多晶硅 ,其平均晶粒尺寸约为1 5 μm .Hydrogenated amorphous silicon (a Si) films were deposited on an Al\|coated substrate of low cost and annealed at different temperatures ( T a) for 10 min. Mixed phases of Si and Al appeared on the surface of the films, and the a Si films started to crystallize at T a=500℃. Most (～80%) of the a Si films were crystallized into polycrystalline silicon (poly Si) films with a mean grain size of 500 nm at T a=550℃. Almost all of the a Si films were transferred into poly Si films with a mean grain size of 1 5 μm at T a=600℃.

关 键 词：固相晶化 多晶硅薄膜 非晶硅薄膜 低温快速晶化 结构分析 

分 类 号：O484[理学—固体物理]