AlN单晶性质与AlGaN外延生长研究  

Properties of Single-crystal AlN and AlGaN Epi-layers

作　　者：付润定 庄德津 修向前[1] 谢自力[1] 陈鹏[1] 张荣[1] 郑有炓[1] FU Runding;ZHUANG Dejin;XIU Xiangqian;XIE Zili;CHEN Peng;ZHANG Rong;ZHENG Youdou(School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,Jiangsu,China;Qingdao AI-Ga Photoelectric Semiconductor Co.,Ltd.,Qingdao 266105,Shandong,China)

机构地区：[1]南京大学电子科学与工程学院,江苏南京210093 [2]青岛铝镓光电半导体有限公司,山东青岛266105

出　　处：《陶瓷学报》2018年第6期690-695,共6页Journal of Ceramics

基　　金：国家重点研发计划资助项目(2017YFB0404201);固态照明与节能电子学协同创新中心;江苏高校优势学科建设工程资助项目;国网山东电力公司技术开发基金

摘　　要：对物理气相传输法(PVT)生长的AlN单晶进行了性质表征,研究了单晶中的杂质和缺陷、发光性质和晶体结构等,结果表明该AlN单晶具有较高的晶体质量。用蓝宝石陪片辅助方法对AlN单晶进行了化学机械抛光,得到了厚度均匀、具有器件质量表面的AlN单晶片。利用MOCVD在AlN单晶片上外延了Al组分约为18.2%的AlGaN薄膜,其生长模式符合StranskiKrastanow模式。利用应变梯度模型解释了AlGaN外延层中应变状态和表面裂纹的形成机制。The structural and optical properties of single-crystal AlN prepared by physical vapor transport(PVT) method were studied. The results show that PVT-AlN single crystal has high quality. AlN samples with the uniform thickness and device-quality surfaces have been obtained by a sapphire-aided CMP method. AlGaN epi-layers with the Al content of 18.2% have been grown on CMP-AlN substrates by metal-organic chemical vapor deposition(MOCVD). The tensile stress in nominally compressed AlGaN layer and the formation mechanism of surface cracks are explained by strain gradients model.

关 键 词：AlN单晶 化学机械抛光 ALGAN Stranski-Krastanow生长模式 应变梯度模型 

分 类 号：TQ174.75[化学工程—陶瓷工业]