SiC薄膜生长过程中的偏压作用  

Bias Effect of Growth of SiC Films

作　　者：王玫[1] 谭利文 王波[1] 邹云娟[1] 严辉[1] 姚振宇[2] 

机构地区：[1]北京工业大学材料科学与工程学院新型功能材料教育部重点实验室,北京100022 [2]中国原子能科学研究院,信箱北京10241327551

出　　处：《北京工业大学学报》2002年第1期107-109,共3页Journal of Beijing University of Technology

基　　金：北京市自然科学基金资助项目(2992002);教育部优秀年轻教师基金资助项目

摘　　要：采用分步偏压溅射法，在Ｓｉ（１００）衬底上制备了高质量的ＳｉＣ薄膜．傅里叶红外（ＦＴＩＲ）光谱测试表明，分步偏压法不仅有利于提高ＳｉＣ薄膜的生长速率，同时也有利于ＳｉＣ薄膜的成核生长．通过原子力显微镜（ＡＦＭ）观察到，单一偏压法制备的样品表面有许多的凹坑，而分步偏压法制备的样品表面则没有出现明显的凹坑．因此，采用分步偏压溅射法不仅可以提高薄膜的生长速率，同时也可以减小对薄膜的离子刻蚀作用，改善薄膜的质量．High quality SiC films were deposited on Si (100) substrates by two-stage bias assisted RE sputtering. The films were characterized by Fourier transform infrared (FTIR) spectra and Atomic Force Microscope (AFM). The FTIR spectra results indicated that two-stage bias was not only helpful for enhancing the growth rate of SiC films, but also for the nucleation of films. AFM images of SiC films showed that the films prepared by two-stage bias had a better surface morphology than that by single-stage bias, because of reducing ion-etching effect on the films. So, SiC film quality was improved by using two-stage bias instead of single-stage bias.

关 键 词：SIC RF溅射 分步偏压溅射 碳化硅 薄膜生长 偏压作用 

分 类 号：O484.1[理学—固体物理]