第三代半导体材料生长与器件应用的研究  

Study on Crystal Growth and Device Application of the 3rd-generation-semiconductors

作　　者：李嘉席[1] 孙军生[1] 陈洪建[1] 张恩怀[1] 

机构地区：[1]河北工业大学材料学院,天津300130

出　　处：《河北工业大学学报》2002年第2期41-51,共11页Journal of Hebei University of Technology

摘　　要：着重论述了以 ＳｉＣ和ＧａＮ为代表的第三代半导体材料的生长、器件及应用在近几年的发展情况．分析了目前常用的和正在研究的几种衬底材料，介绍了制备引ＳｉＣ和ＧａＮ单晶的方法．分析了ＳｉＣ和ＧａＮ器件工艺目前存在的问题和今后的研究方向．总结了ＳｉＣ和ＧａＮ器件的研制情况，指出单晶质量是限制器件发展的主要因素．分析了ＳｉＣ和ＧａＮ器件的目前应用和未来的市场前景，指出了ＳｉＣ和ＧａＮ材料、器件今后的研究重点和今后的发展方向．The 3rd-generation-semiconductors* (represented by SiC and GaN) growth, device and application is mainly discussed in recent years. The several common used and researched substrates presently are analyzed. The methods of producing single crystal of SiC and GaN are introduced. It is analyzed that the problems exist in SiC and GaN devices technique at present and the researching direction of SiC and GaN devices technique is in the future. The researched and produced level of SiC and GaN devices is generalized. It points that the quality of the single crystal is the main factor limiting the development of devices. The using presently and the market prospect in the future of SiC and GaN devices are analyzed. It points the researching emphasis and developing direction of the SiC and GaN devices, materials in the future.

关 键 词：第三代半导体材料 碳化硅 氮化镓 晶体生长 半导体器件 宽带隙半导体 SiC GAN 

分 类 号：TN304.2[电子电信—物理电子学] TN305