氟化非晶碳膜的光学带隙和伏安特性  

The optical gap and I-V characteristic of a-C∶F thin film

作　　者：黄峰[1] 康健[1] 杨慎东[1] 叶超[1] 程珊华[1] 宁兆元[1] 甘肇强[1] 

机构地区：[1]苏州大学物理系,江苏苏州215006

出　　处：《功能材料》2002年第3期283-285,共3页Journal of Functional Materials

摘　　要：用苯 (C6H6)和三氟甲烷 (CHF3 )混合气体作源气体 ,采用永磁微波电子回旋共振等离子体化学气相沉积 (MWECR CVD)技术 ,制备了氟化非晶碳膜 (a C∶F)。光学带隙的结果表明它与膜中的C、F元素含量和键结构都有关系 ;伏安特性的测量表明a C∶F薄膜的电导在低电场下呈欧姆特性 。Fluorinated amorphous carbon films (a C∶F) were deposited by microwave cyclotron resonance plasma chemical vapor deposition (MWECR CVD) using benzene (C 6H 6) and trifluoromethane (CHF 3) as source gases. The result of the optical gap shows that it was related to contents of C, F and C F. We also research the I V characteristic of the film, which shows ohmic characteristic at lower electric field and follows Schottky emitting mechanism at higher electric field.

关 键 词：氟化非晶碳膜 光学带隙 伏安特性 超大规模集成电路 

分 类 号：O484[理学—固体物理] TN47[理学—物理]