同步辐射x射线光刻制作深亚微米T形栅  

Deep-submicron T-shaped gate fabrication technology using syn chrotron radiation x-ray lithography

作　　者：谢常青[1] 陈大鹏[1] 李兵[1] 叶甜春[1] 

机构地区：[1]中国科学院微电子中心,北京100010

出　　处：《微纳电子技术》2002年第6期39-41,共3页Micronanoelectronic Technology

摘　　要：x射线光刻非常适合用于深亚微米T形栅的制作,这是因为它的高分辨率、大的曝光视场和高的生产效率足以满足MMIC制造工艺的要求。本文中我们首先对我们的x射线掩模制造工艺进行介绍,然后论述了一种用于制造深亚微米T形栅的两层胶工艺,介绍了所取得的一些研究结果,最后对国内的深亚微米光刻现状进行了简要分析。X-ray lithography is very suited for the fabrication of deep-submicron T-shaped gate,because its combination of high resolution,large exposure window and high throughout satisfies the requirements for MMIC manufacturing process.In this paper,the home-made x-ray mask fabri-cation process is introduced firstly,then a two layer resists method which is used to fabricate deep-submicron T-shaped gate and some initial research results are described,and the domestic deep-submicron lithography status is analyzed briefly at last.

关 键 词：光刻制作 深亚微米 T形栅 X射线掩模 X射线光刻 同步辐射 

分 类 号：TN305.7[电子电信—物理电子学]