Tunnel Junction AlGaInP Light Emitting Diode  

隧道结 Al Ga In P发光二极管(英文)

作　　者：王国宏[1] 沈光地[1] 郭霞[1] 高国[1] 韦欣[2] 张广泽[2] 马骁宇[2] 李玉璋[2] 陈良惠 

机构地区：[1]北京工业大学信息学院北京市光电子技术实验室,北京100022 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2002年第6期628-631,共4页半导体学报（英文版）

摘　　要：The n type GaAs substrates are used and their conductive type is changed to p type by tunnel junction for AlGaInP light emitting diodes(TJ LED),then n type GaP layer is used as current spreading layer.Because resistivity of the n type GaP is lower than that of p type,the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n type GaP current spreading layer.For TJ LED with 3μm n type GaP current spreading layer,experimental results show that compared with conventional LED with p type GaP current spreading layer,light output power is increased for 50% at 20mA and for 66 7% at 100mA.报道了通过隧道结将衬底的导电类型从 n型转变到 p型 ,从而可以利用 n型 Ga P作为以 n型 Ga As为衬底的 Al Ga In P发光二极管的电流扩展层 .n型电流扩展层的电阻率低于 p型电流扩展层的电阻率 ,这种结构改善了电流扩展层的作用 ,从而提高了发光二极管的光提取效率 .对 3μm Ga P电流扩展层的发光二极管 ,实验结果表明 ,隧道结发光二极管的发光功率与具有相同基本结构的传统发光二极管相比 ,2 0 m A时发光功率提高了 5 0 % ,10 0 m A时提高了 6 6 .7%

关 键 词：tunnel junction ALGAINP high brightness LED MOCVD 

分 类 号：TN312.8[电子电信—物理电子学]