用于MEMS的选择性形成多孔硅技术的研究  

Investigation of Selectively Forming Porous Silicon Used in MEMS

作　　者：谢克文[1] 王晓红[1] 陈兢[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2002年第6期668-672,共5页半导体学报（英文版）

摘　　要：提出了一套采用扩散工艺在低掺杂的硅衬底上选择性形成多孔硅牺牲层 ,并制作了 MEMS器件结构的工艺流程 ,进行了工艺流水 .对得到的结果进行了详细的讨论 .对于Forming porous silicon selectively which is used as a sacrificial layer on the low doped silicon substrate by using diffusion process and then fabricating free standing microstructures is presented.A process run is made and the results of the experiment are discussed in detail.The technology of removal porous silicon using KOH solution is also studied.

关 键 词：MEMS 多孔硅 扩散 牺牲层 掺杂 硅衬底 

分 类 号：TN304.05[电子电信—物理电子学]