多介质工艺X射线光刻制作T形栅  

T-shaped Gate Fabrication by X-ray Lithography of Multi-layered Media

作　　者：孙加兴[1] 叶甜春[2] 谢常青[2] 申云琴[1] 刘刚[3] 

机构地区：[1]天津大学电子信息工程学院,天津300072 [2]中科院微电子中心,北京100010 [3]中国科技大学国家同步辐射实验室,合肥230026

出　　处：《真空科学与技术》2002年第3期239-241,共3页Vacuum Science and Technology

摘　　要：半导体器件日益向高频、高速方向发展 ,赝质结高电子迁移率晶体管以其高频、高速、低噪声受到人们重视而发展迅速。在PHEMT的制作工艺中 ,栅线条的制作是至关重要而又极为困难的。采用X射线多介质工艺制作T形栅 ,其形貌清晰 ,线条基本可控 。A novel technique,the multi layered media technology,has been successfully developed to fabricate T shaped gate of pseudomorphic high electron mobility transistor(PHEMT)by X ray lithography.Our results showed that the fairly clear and sharp features of the T gate can be well controlled with a line width of 0 1 μm.We suggest that the multi-layered media technology is feasible and promising in X ray lithography for MMIC fabrication.

关 键 词：光刻 X射线 赝质吉高电子迁移率晶体管 T形栅 多介质工艺 半导体器件 

分 类 号：TN321.5[电子电信—物理电子学] TN305.7