钽薄膜淀积速率与阻挡效果的研究  

Diffusion Barrier Properties of Ta Films Deposited with Different Rates

作　　者：庞恩文[1] 林晶[1] 吉小松[1] 汪荣昌[1] 戎瑞芬[1] 宗祥福[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《固体电子学研究与进展》2002年第2期185-188,共4页Research & Progress of SSE

基　　金：国家自然科学基金重点项目资金资助 (项目编号 6983 60 3 0 )

摘　　要：在硅衬底上用不同淀积速率溅射得到了 60 nm厚钽薄膜作为铜布线工艺中的扩散阻挡层。样品在退火前后 ,用二次离子质谱仪 (SIMS)对钽膜的阻挡效果进行鉴定 ,原子力显微镜 (AFM)分析了钽薄膜的形貌结构。研究发现不同淀积速率制作的钽膜由于其结构的差异对铜硅互扩散有着不同的阻挡效果 ,并提出样品在退火时 。60 nm tantalum (Ta) films were deposited with different rates by a sputtering process as diffusion barrier for copper metallization. After annealing, second Ion Mass Spectrum (SIMS) was employed to characterize the barrier performance. The microstructure of Ta film was investigated by Atom Force Microscope (AFM). It was found that Ta films deposited with different rates show different performance due to their distinct microstructure. This study also shows that the recrystallizing of the Ta film during annealing was one main factor causing the failure of diffusion barrier.

关 键 词：钽薄膜 淀积速率 阻挡效果 铜布线 超大规模集成电路 

分 类 号：TN470.592[电子电信—微电子学与固体电子学]