GaAs基InAlAs/InGaAsMHEMT直流特性研究  

DC Performance of GaAs-based InAlAs/InGaAs MHEMT

作　　者：李献杰[1,2] 敖金平[1] 曾庆明[1] 刘伟吉[1] 徐晓春[1] 刘式墉[2] 梁春广[1] 

机构地区：[1]河北半导体研究所 [2]吉林大学电子工程系,长春130023

出　　处：《固体电子学研究与进展》2002年第2期235-237,共3页Research & Progress of SSE

摘　　要：报道了用 MBE技术生长的 Ga As基 In Al As/In Ga As改变结构高电子迁移率晶体管 (MHEMT)的制作过程和器件的直流性能。对于栅长为 0 .8μm的器件 ,最大非本征跨导和饱和电流密度分别为 3 5 0 m S/mm和1 90 m A/mm。源漏击穿电压和栅反向击穿电压分别为 4V和 7.5 V。这些直流特性超过了相同的材料和工艺条件下 Ga As基 PHEMT的水平 ,与 In P基 In Al As/In Ga AsFabrication and performance of GaAs based InAlAs/InGaAs Metamorphic High Electron Mobility Transistor (MHEMT) were reported. Maximum extrinsic transconductance and maximum saturation current density are 350 mS/mm and 190 mA/mm respectively for the devices with gate length of 0.8 μm. Drain to source breakdown voltage and Schottky breakdown voltage are 4 V and 7.5 V, respectively. The devices have shown better DC performance than GaAs based PHEMTs and comparable performance to InP based HEMTs.

关 键 词：MHEMT 直流特性 砷化镓 铟铝砷 铟镓砷 电子迁移率晶体管 

分 类 号：TN325.3[电子电信—物理电子学]