生长温度对ZnO薄膜结构的影响  

Influence of growth temperature on the structure of ZnO thin film

作　　者：王金忠[1] 王新强[1] 闫玮[1] 殷宗友[1] 马燕[1] 姜秀英[1] 杨树人[1] 高鼎三[1] 杜国同[1] 

机构地区：[1]吉林大学电子工程系光电子联合重点实验室,长春130023

出　　处：《功能材料与器件学报》2002年第2期115-118,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(69896260;59910161983和69777005);吉林省科学基金(19990518-1)

摘　　要：在不同温度下,利用射频等离子体增强型MOCVD系统,在蓝宝石C面上生长出了C轴单一取向的ZnO薄膜,并通过XRD、SEM手段对生长温度与样品的生长速度、表面结构和氧锌原子化学计量比的关系作了较为详细的研究,优化了薄膜的温度生长参数。当生长温度为520oC时,ZnO薄膜的生长速度最大且表面粗糙度较低。当温度为550oC时,可生长出O:Zn为49.99:50:01的近本征ZnO薄膜。ZnO films under different growth te mperature were grown on c -plane of sa pphire sub -strates by RF -plasma -enhanced MOCV D.These samples were characterized with XRD and SEM methods.Furthermore,the influences of growth temperature on growth velocity,surface structure and stoichiometry of oxygen and zinc in the films were investigated in detail.The parameter of growth temperature was optimized.T he growth rate of ZnO film is high at 520 o C,while its rough -ness is low.Growing at 550 o C,ZnO thin film with atomic ratio(O:Zn =49.99:50.01)is obtained.

关 键 词：生长温度 XRD SEM 化学计量比 氧化锌薄膜 

分 类 号：TN304.21[电子电信—物理电子学]