Si衬底上Ta-N/Cu薄膜性能研究  

Investigation of the properties of Ta-N /Cu film on Si substrate

作　　者：周健[1] 夏冠群[1] 刘文超[1] 李冰寒[1] 王嘉宽[1] 郝幼申[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,固态元器件实验室上海200050

出　　处：《功能材料与器件学报》2002年第2期187-190,共4页Journal of Functional Materials and Devices

摘　　要：对Si衬底上Ta-N/Cu薄膜进行了电学和热学分析,结果发现5000C以下薄膜电阻几乎不变,600～6900C下的退火引起的电阻率降低是由于Ta-N电阻的热氧化和Cu熔化扩散引起的,而6900C以上的电阻率增加是由于Cu引线传输能力减弱所致。为0.18μm以下的超大规模集成电路中的Cu引线和电阻薄膜的制作提供了有益的借鉴。Electrical and thermal properties of Ta -N /Cu film on the Si substrate we re investigated.Results show that Ta -N resistance almost does not change when annealing t emperature is lower than500 0 C.The decrease of resistance for Ta -N /Cu film annealed from 6000 C to 690 0 C is induced by oxidation of Ta -N and diffusion,whi le the increase of resistance for Ta -N /Cu film annealed at temperature higher than 690 0 C is attributed to the lost of the tran sportation ability of Cu line.The study will benefit the fabrication o f Cu line and resistor film in very large scale integrating circuit(VLSI ).

关 键 词：退火 热扩散 薄膜电阻 SI衬底 Ta-N/Cu薄膜 

分 类 号：TN304.055[电子电信—物理电子学]