衬底热空穴导致的薄栅介质经时击穿的物理模型研究  

STUDY ON SUBSTRATE HOT-HOLE-INDUCED PHYSICAL MODEL OF TDDB IN THIN GATE DIELECTRIC

作　　者：刘红侠[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《电子与信息学报》2002年第7期982-986,共5页Journal of Electronics & Information Technology

基　　金：国家部级资助项目

摘　　要：该文定量研究了热电子和空穴注入对薄栅氧化层击穿的影响,讨论了不同应力条件下的阈值电压变化,首次提出了薄栅氧化层的经时击穿是由热电子和空穴共同作用的结果,并对上述实验现象进行了详细的理论分析,提出了薄栅氧化层经时击穿分两步。首先注入的热电子在薄栅氧化层中产生陷阱中心,然后空穴陷入陷阱导致薄栅氧击穿。The roles of hot electrons and holes in dielectric breakdown of the thin gate oxide have been quantitatively investigated in this paper. The changes of threshold voltage have been discussed under different stress conditions. This paper is the first report that points out the cooperation of hot electrons and holes is essential for the time dependent dielectric breakdown in thin gate oxide. A detailed theory analysis is made and a two-step models of thin gate oxide is presented. The first step is injected hot electrons create trap centers in thin gate oxide, and the second step is thin gate oxide breakdown induced by hole trapping.

关 键 词：衬底热空穴 薄栅介质 物理模型 薄栅氧化层 经时击穿 

分 类 号：TN386[电子电信—物理电子学]