高能质子单粒子翻转效应的模拟计算  

SIMULATION CALCULATION OF SINGLE EVENT UPSET EFFECTS FOR HIGH ENERGY PROTONS

作　　者：贺朝会[1] 陈晓华[1] 李国政[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《计算物理》2002年第4期367-371,共5页Chinese Journal of Computational Physics

摘　　要：在分析质子与硅反应的基础上 ,提出质子单粒子翻转截面理论计算模型 ,建立了模拟计算方法 .计算得到了不同能量的高能质子在存储单元的灵敏区内沉积的能量 .指出高能质子主要通过与硅反应产生的重离子在存储单元灵敏区内沉积能量 ,产生电荷 ,导致单粒子效应 ,得到了单粒子翻转截面与质子能量以及随临界电荷变化的关系 .并将计算得到的单粒子翻转截面与实验数据进行了比较 .A model and a simulating method for calculating the proton Single Event Upset(SEU) cross section are presented by the analysis of proton reactions in silicon. The energies deposited by protons of various energies are calculated in sensitive volume in memory cell. It is pro posed that high energy proton SEU is greatly attributed to the recoils(heavy ions), produced by proton reactions in silicon, which deposit ener gy and induce charge in sensitive volume. The relations of the SEU cross section vs. proton energy and critical charge have been obtained. The calculation results are in agreement with the experimental data.

关 键 词：高能质子 计算 单粒子翻转 MONTECARLO模拟 模型 半导体器件 航天器 空间辐射 

分 类 号：V443[航空宇航科学与技术—飞行器设计] O571.42[理学—粒子物理与原子核物理]