大尺寸6H-SiC半导体单晶材料的生长  

Growth of Large 6H-SiC Single Crystals

作　　者：陈之战[1] 肖兵[1] 施尔畏[1] 庄击勇[1] 刘先才[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《无机材料学报》2002年第4期685-690,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金重点项目(51032040);中国科学院上海硅酸盐研究所所长择优基金资助

摘　　要：报道了生长SiC单晶的PVT法生长工艺,研究了晶体生长温度、温度梯度、生长室压力、杂质等因素对晶体生长和晶体质量的影响,确定出合理的工艺条件,生长出φ45mmSiC单晶.X射线衍射表明,生长的单晶为6H多型结构,通过腐蚀法得到晶体中微管道密度约为103cm-2,位错密度约为104～105cm-2.测试了SiC单晶的半导体特性,结果表明:晶体为n型,电阻率约300Ω·cm,迁移率90cm2V-1S-1,载流子浓度在1014cm-3量级.The growth process of large SiC single crystals by PVT method was reported. The influences of growth temperature, temperature gradient, the pressure in the growth chamber and impurity on the crystal growth and its quality were investigated. The large 6H-SiC single crystal with diameter of 45mm was successfully gown under optimum process conditions. The densities of micropipe and dislocation were ca. 10(3)cm(-2) and 10(4) similar to 10(5)cm(-2) respectively observed through chemical etching technique. The crystal was n-type semiconductor, the carrier concentration and electron mobility were 10(14)cm(-3) and 90cm(2)V(-1)S(-1) respectively.

关 键 词：6H-SIC 半导体 碳化硅单晶 晶体生长 PVT法 微管道 

分 类 号：TN304.32[电子电信—物理电子学] TN304.05