对称三材料双栅应变硅金属氧化物半导体场效应晶体管二维解析模型  

Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs

作　　者：辛艳辉[1,2] 刘红侠[1] 王树龙[1] 范小娇[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071 [2]华北水利水电大学信息工程学院,郑州450045

出　　处：《物理学报》2014年第14期389-394,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61376099;11235008);教育部博士点基金(批准号:20130203130002;20110203110012)资助的课题~~

摘　　要：提出了对称三材料双栅应变硅金属氧化物半导体场效应晶体管器件结构,为该器件结构建立了全耗尽条件下的表面势模型、表面场强和阈值电压解析模型,并分析了应变对表面势、表面场强和阈值电压的影响,讨论了三栅长度比率对阈值电压和漏致势垒降低效应的影响,对该结构器件与单材料双栅结构器件的性能进行了对比研究.结果表明,该结构能进一步提高载流子的输运速率,更好地抑制漏致势垒降低效应.适当优化三材料栅的栅长比率,可以增强器件对短沟道效应和漏致势垒降低效应的抑制能力.A novel double-gate strained Si metal-oxide-semiconductor field-effect transistor（MOSFET）, in which the top and bottom gates consist of three laterally contacting materials with different work functions, is proposed in this paper.The two-dimensional（2D） analytical models for the surface potential, surface electric field and threshold voltage are presented. The effects of Ge fraction on surface potential, surface electric field and threshold voltage are investigated.The effects of the triple-material length ratio on threshold voltage and drain induced barrier lowering are discussed. The characteristics of the device are studied by comparing with those of the single-material double-gate MOSFETs. The results show that the structure can increase the carrier transport speed and suppress the drain induced barrier lowering effect. The three-material gate length ratio is optimized to minimize short-channel effect and drain induced barrier lowering effect.

关 键 词：应变硅 金属氧化物半导体场效应晶体管 表面势 阈值电压 

分 类 号：TN386[电子电信—物理电子学]