V掺杂6H-SiC光导开关制备与性能研究  

Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch

作　　者：周天宇[1] 刘学超[1] 代冲冲 黄维[1] 施尔畏[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海201800

出　　处：《强激光与粒子束》2014年第4期268-271,共4页High Power Laser and Particle Beams

基　　金：中国科学院知识创新工程重要方向性项目(KGCX2-YW-206);国家高技术发展计划项目;上海市科技启明星项目(13QA1403800);上海硅酸盐研究所创新基金项目(Y39ZC1110G)

摘　　要：采用V掺杂半绝缘6H-SiC单晶衬底材料制备了平面电极型大功率SiC光导开关,用强度为150 μJ/mm2、波长为355 nm的脉冲激光对开关进行触发,在1～14 kV的外加电压范围内对光导开关的耐压特性、导通电阻等性能进行了研究.结果表明：随着开关外加电压的升高,开关的电流峰值呈现不断增大的趋势,当开关外加电压为14 kV时,电流峰值达185 A,对应的光导开关峰值功率为2.59 MW,开关的导通电阻约为22 Ω.High power photoconductive semiconductor switches(PCSSs)were fabricated on V-doped semi-insulating 6HSiC single crystal.The 6H-SiC PCSS were measured by applying a bias voltage from 1kV to 14kV.The triggered laser was a 355nm pulse laser with an energy density of 150μJ/mm2.The peak photocurrent shows an increasing trend with improving the applied voltage.The peak photocurrent running through the PCSS and the calculated on-state resistance are 185Aand about 22Ω respectively when the applied voltage reaches 14kV,and the corresponding peak power is 2.59MW.

关 键 词：碳化硅 光导开关 导通电阻 峰值功率 

分 类 号：TN304.24[电子电信—物理电子学]