抗辐射SOI器件栅氧可靠性研究  

Study of Radiation-hard SOI Gate Oxide Reliability

作　　者：吴建伟 谢儒彬[1] 顾祥[1] 刘国柱[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2014年第7期40-43,共4页Electronics & Packaging

摘　　要：对抗辐射SOI器件栅氧可靠性进行研究,比较了体硅器件、SOI器件、抗总剂量加固SOI器件的栅氧可靠性,发现SOI材料片的制备与抗总剂量加固过程中的离子注入工艺都会对顶层硅膜造成影响,进而影响栅氧可靠性。最后通过恒压应力法表征栅氧介质随时间击穿(TDDB)的可靠性,结果显示抗总剂量辐射加固工艺的12.5 nm栅氧在125℃高温5.5 V工作电压下TDDB寿命达到14.65年,满足SOI抗总剂量辐射加固工艺对栅氧可靠性的需求。The paper focused on the radiation-hard SOI technology gate oxide reliability.Compared the gate oxide reliability of Si,SOI and radiation-hardened SOI.Found that the the process of ion-implant during the preparation of SOI and radiation-hard could affect the quality of the top-Si in SOI.So that,reducing the gate oxide reliability.The constant-voltage stressing test was applied to estimate time-dependent dielectric breakdown life of gate oxide with radiation-hard process.The life of 12.5 nm gate oxide with radiation-hard process is about 14.65 years under 125 ℃high-temperature and 5.5 V work conditions.It can meet the requirement in the SOI radiation-hard technology.

关 键 词：SOI 抗总剂量辐射加固 栅氧 可靠性 TDDB 

分 类 号：TN305[电子电信—物理电子学]