氧化镓衬底基片化学机械抛光的研究  

Research of Ga2O3 Substrate CMP Technology

作　　者：高翔[1,2] 周海[1] 张清[1,3] 张圆[1,2] 

机构地区：[1]盐城工学院,江苏盐城224051 [2]江苏大学,江苏镇江212013 [3]安徽理工大学,江苏淮南232001

出　　处：《机械设计与制造》2014年第8期89-91,共3页Machinery Design & Manufacture

基　　金：江苏省自然科学基金项目(BK2008197);江苏省"青蓝工程";江苏省新型环保重点实验室开放课题基金(AE201120);江苏省生态环境材料重点建设实验室开放课题资助(EML2012013);江苏省国际科技合作聘专重点项目;江苏省大学生创新训练计划项目的资助

摘　　要：针对氧化镓衬底基片的化学机械抛光(CMP)进行了研究。介绍了氧化镓衬底基片的化学机械抛光工艺,讨论了影响抛光结果的因素:p H值、温度、压力、磨粒。通过大量的实验,最终确定了优化方案。提出先以粗抛光去除研磨后产生的划痕、凹坑等表面缺陷,再以精抛光降低表面粗糙度并获得高光洁衬底基片的方案。研究结果表明:在27℃抛光温度,9.0≤p H≤11的条件下,使用粒径为40nm,低分散度的Si O2溶胶磨粒,并加入适量添加剂,配合合理的工艺参数,可以获得具有良好表面质量的氧化镓衬底基片及较高的抛光去除率。The chemical mechanic polishing （CMP） ofGa2O3 substrate is studied. The polishing process of Ga2O3 substrate is introduced, and the factors that affect the polishing results are discussed, including pH, temperature, pressure, abrasive particle. Through a lot of experiments, the optimization scheme is finalized. First, it utilizes the coarse polishing to remove the surface defect such as scratches and pits generated by lapping;, second, the finishing polishing is used to reduce the surface roughness and acquire high smooth surface of Ga203 substrate. The result shows that with the polishing temperature of 27℃, the range of pH is 9.0 to 11, using the abrasives of silicon dioxide colloid of 40nm in diameter and low distribution degree, adding suitable amount of additives, together with reasonable process parameters, it can achieve Ga203 substrate with good surface quality and higher polishing removal rate.

关 键 词：氧化镓 化学机械抛光 工艺参数 表面质量 去除率 

分 类 号：TH16[机械工程—机械制造及自动化]