等离子体浸没离子注入技术在FinFET掺杂中的应用  

Application of the Plasma Immersion Ion Implantation in FinFET Doping

作　　者：邹志超[1] 李超波[1] 罗军[1] 夏洋[1] 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《半导体技术》2014年第8期596-599,604,共5页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2009ZX02037)

摘　　要：基于传统的束线离子注入在对FinFET器件进行保形注入时面临的巨大挑战,介绍一种新的适用于FinFET器件的掺杂技术,即等离子体浸没离子注入技术。总结了与束线离子注入技术相比,等离子体浸没离子注入技术在对FinFET进行掺杂时的优点。利用自行设计并搭建的等离子体浸没超低能离子注入机分别对平面单晶硅和鳍状结构进行离子注入,并对鳍状结构进行快速退火。利用二次离子质谱(SIMS)测量了平面单晶硅的注入结深,通过透射电子显微镜(TEM)测试了退火前后鳍状结构的晶格损伤及修复状况,结果显示,利用等离子体浸没离子注入技术可以对鳍状结构进行有效的掺杂,而且对注入后的样片进行快速退火后,晶格损伤得到良好的修复。Based on the challenges of the conventional beam line ion implantation for conformal do- ping of FinFET devices, a new doping technique applicable to FinFET devices-plasma immersion ion implantation was introduced. Compared with the conventional beam line ion implantation, the advantages of the plasma immersion ion implantation applied to FinFET were summarized. Using the plasma immersion ion implantation technique to implement ion doping on plane monocrystalline silicon and fin, and the fin was rapid annealed. The junction depth of planar silicon was measured by the two secondary ion mass spectrometry （SIMS）. Lattice damage and repair of fin were measured by the transmission electron microscopy （TEM）. The results show that the plasma immersion ion implantation can achieve conformal doping of fin structure well, and after rapid thermal annealing, lattice damage of fin caused by doping can be repaired well.

关 键 词：等离子体浸没离子注入 束线离子注入 鞘层 FINFET 保形注入 

分 类 号：TN305.3[电子电信—物理电子学]