铁氧体隔离器薄膜电路制备工艺研究  

Preparation Process Study of Thin Film Circuits on Ferrite Isolator

作　　者：魏晓旻[1] 柳龙华[1] 

机构地区：[1]中国电子科技集团公司第38研究所,合肥230088

出　　处：《电子与封装》2014年第1期34-37,共4页Electronics & Packaging

基　　金：装备预先研究项目(51318070119)

摘　　要：文中采用磁控溅射方式在铁氧体基片上制备了微带隔离器的多层膜结构。通过带金属掩模版溅射电阻层,避免了对薄膜电阻的光刻和刻蚀;通过使用铜靶和湿法刻蚀,克服了对溅射用金靶、反应离子刻蚀等工艺技术和设备的依赖。该新型工艺方法简化了镍铬薄膜电阻的制作,降低了薄膜电路的制造成本,可应用于集成电阻的薄膜电路基板的研制。The multilayer film structure of microstrip isolator was prepared by magnetron sputtering on ferrite substrate. The photolithography and etching process of the film resistor was avoided by sputtering of resistor layer with metal mask. The preparation process also avoided the dependence on sputtering Au target and reactive ion etching technologies by using Cu target and wet etching. This new process simplified the fabrication of NiCr film resistor and reduced the cost of thin film circuits. It can be applied in fabricating film circuits with integrated resistor.

关 键 词：铁氧体 微带隔离器 薄膜电路 磁控溅射 

分 类 号：TN45[电子电信—微电子学与固体电子学]