ST-石英的湿法腐蚀工艺研究  

Study on Wet Etching Process of ST-cut Quartz

作　　者：林丙涛[1] 唐光庆[2] 周倩[1] 张巧云[1] 翁邦英[1] 班亚娟 

机构地区：[1]中国电子科技集团公司第26研究所,重庆400060 [2]中国人民解放军驻重庆气体压缩机厂军事代表室,重庆400050

出　　处：《压电与声光》2014年第5期779-781,共3页Piezoelectrics & Acoustooptics

摘　　要：对影响ST-切向石英表面湿法腐蚀质量的因素进行了试验研究,并对结果进行了详细分析。试验基片材料为双面抛光的ST-切向石英晶体,掩蔽膜材料为Cr/Au双层金属膜,腐蚀液为HF和NH4F的混合溶液;主要研究了基片清洗、腐蚀液成分配比及腐蚀温度等工艺参数对基片表面腐蚀质量的影响,并通过选择最佳的试验参数,以约0.7μm/min的适中腐蚀速率加工出了满足要求的晶体表面。Experiment research on the factors which affect the wet etching quality of ST-cut quartz is performed, and the results are discussed in depth. In our experiments, double-side polished ST-cut quartz, Cr/Au double films, mixtures of hydrofluoric acid （HF） and ammonium fluoride （NH4 F）, are selected as etch wafer, etch mask and etchants, respectively. The effects of the process parameters including wafer cleaning, composition proportion of etchants and etching temperature on the etching quality of the substrate surface have been investigated. The optimal process parameters are acquired and the crystal surface meeting the requirements is fabricated under moderate etching rate of 0.7 μm/min.

关 键 词：ST-切石英 湿法腐蚀 掩蔽膜 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]