强脉冲X射线辐照在Si-SiO_2中感生的界面态及退火消除  

Radiation-induced interface states of Si-SiO_2 by intense pulse X-ray and their annealing

作　　者：杨志安[1] 靳涛[2] 李英俊[3] 姚育娟 罗尹虹 

机构地区：[1]济南大学理学院,山东济南250022 [2]中国科学院新疆物理研究所,新疆乌鲁木齐830011 [3]中国矿业大学基础系,北京100083 [4]西北核技术所,陕西西安710024

出　　处：《强激光与粒子束》2002年第4期521-525,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金资助的课题 ( 6 986 6 0 0 1)

摘　　要：利用强脉冲 X射线对 Si- Si O2 界面进行了辐照 ,测量了界面态曲线和退火曲线。实验显示 :经过强脉冲 X射线对 Si- Si O2 界面进行的辐照 ,在 Si- Si O2 界面感生出新的界面态 ,感生界面态的增加与辐照剂量成正比 ,并且易出现饱和现象。总结出了感生界面态密度产额 Dit随辐照剂量 D变化的分布式 ,并定性分析了Dit随 D变化的行为。退火实验表明 ;强脉冲 X射线辐照感生出的界面态越多 ,退火时这些界面态就消除得越快。退火过程显示有滞后现象 ,即辐照剂量大的阈电压漂移 ,在退火后恢复的绝对值 ,要小于辐照剂量小的阈电压漂移。导出了阈电压漂移随退火时间变化的关系 ,定性解释了滞后现象。Irradiated by intense pulse X-ray, density of Si-SiO 2 interface states and annealing process are measured. Experiment results show that radiation-induced interface traps in Si-SiO 2 increase with the dose. A distribution about density of Si-SiO 2 interface states vs. radiation dose is summarized and thus radiation impairment effects and mechanism are discussed. Experiment shaw that:(1) interface states induced by intense radiation saturated easily, (2) that the more radiation-induced interface states, the more rapid they eliminate in annealing process, (3) there exist retardation in annealing process, which means after annealing process, the threshold voltage shift caused by high dose radiation goes smaller than that caused by low dose radiation, (4) an annealing formula about threshold voltage shift vs. annealing time is deduced to the retardation.

关 键 词：强脉冲X射线辐照 SI-SIO2 退火 强辐射场 界面态 半导体材料 MOS器件 

分 类 号：O472.3[理学—半导体物理] TN386.1[理学—物理]