薄膜电路通孔结构光刻胶喷涂工艺  

Spray Coating of Photoresist on Through Via Structure in Thin Film Circuits

作　　者：魏晓旻[1] 柳龙华[1] 邱颖霞[1] 

机构地区：[1]中国电子科技集团公司第三十八研究所,安徽合肥230088

出　　处：《电子工业专用设备》2014年第4期42-45,共4页Equipment for Electronic Products Manufacturing

基　　金：国家装备预先研究项目(51318070119)

摘　　要：采用经稀释的光刻胶在喷胶机上对打孔的基片进行了雾化喷涂试验,在通孔结构表面实现了光刻胶的均匀涂覆。在同一基片上选取了十个通孔,采用扫面电镜对基片表面、通孔边缘及通孔侧壁中部和底部四处的光刻胶厚度进行了测量,得到的平均膜厚分别为10.2、8.8、6.1和5.3μm,各处厚度均匀性均小于±10%。The diluted photoresist was applied in spray coating process on drilled substrate using a spray coating equipm ent. The conform al coating of photoresist layer on through via structure was achieved. Ten through via on the sam e substrate were selected. For each through via,the photoresist layer thickness of substrate surface,through via edge,sidewall center and sidewall bottom were m easured respectively by H ITACHI Scanning E lectron Microscope. The average value of film thickness were 10.2,8.8,6.1 and 5.3μm ,and allthickness uniform ity was less than ±10% .

关 键 词：薄膜电路 通孔 光刻胶 喷涂 

分 类 号：TN405[电子电信—微电子学与固体电子学]