直拉区熔联合法硅单晶生长技术研究  

The Growth Technology of Czochralski and Float-Zone Combination

作　　者：庞炳远[1] 闫萍[1] 索开南[1] 董军恒[1] 刘洪[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2014年第8期11-14,共4页Equipment for Electronic Products Manufacturing

摘　　要：通过直拉工艺生长直径60 mm的N型〈100〉单晶,之后以该单晶作为原料,采用区熔工艺生长成50mm（2英寸）N型〈111〉单晶,单晶的电阻率为2.71～5.35Ω·cm,少子寿命为500～750 μs,氧碳含量均低于1×16 cm-3.实验表明,通过直拉工艺和区熔工艺联合方式研制的低阻硅单晶具有电阻率控制准确、氧碳含量低、工艺易于实施等特点.同时,对直拉区熔联合法生长单晶的技术特点进行了探讨.Firstly, Czochralski method is used to grow 〈100〉 monocrystal with 60mm in diameter. Then, the crystal is used as a material, and float-zone method is used to grow 〈111〉 monocrystal with 2 inch in diameter. After testing, the resistivity of the monocrystal is 2.71 - 5.35 Ω·cm, the minority carrier lifetime is 500 - 750μs, the oxygen and carbon levels were lower than 1 ×16 cm-3. Experiments show that the combination of Czochralski method and float-zone method can develop accurate resistivity silicon with low oxygen levels and low carbon levels, and the whole process is easy to implement. In this paper, we also discussed the technical features of the combination of Czochralski method and float-zone method.

关 键 词：直拉 区熔 硅单晶 电阻率 

分 类 号：TN304.053[电子电信—物理电子学]