三层硅加速度敏感芯片BCB键合工艺研究  

Research on BCB bonding process of acceleration sensitive chip made of three-layer Si wafer

作　　者：刘智辉[1] 田雷[1] 李玉玲[1] 尹延昭[1] 

机构地区：[1]中国电子科技集团公司第四十九研究所,黑龙江哈尔滨150001

出　　处：《传感器与微系统》2015年第3期37-39,43,共4页Transducer and Microsystem Technologies

摘　　要：采用非光敏苯并环丁烯(BCB)进行MEMS压阻式加速度敏感芯片三层结构制作。BCB键合具有工艺温度低、键合表面要求低等特点,适用于芯片的圆片级封装。但是固化过程中BCB粘度随温度升高而下降,流动性变大,在毛细作用的影响下沿着微小间隙流淌,导致可动部件粘连,器件失效。通过控制BCB厚度、增加BCB阻挡槽解决了可动部件粘连问题,制作了三层硅结构的加速度敏感芯片。样品漏率小于1.0×10-10Pa·m3/s,键合剪切强度大于20MPa,能够满足航天、工业、消费电子等各领域的应用需求。Fabrication of three-layer Si structure MEMS piezoresistive acceleration sensitive chips by BCB bonding is carried out. Bonding with Benzo-cyclo-butene（ BCB） is suitable for MEMS wafer level packaging because of its low process temperature and low requirement for surface. But viscosity of BCB reduce and liquidity increase while the temperature rise,BCB flows along the micro-gaps due to the capillary-effect,which leads to conglutination of movable structure and failure of the device. By controlling thickness of BCB,and adding overcome groove resolve problem of conglutination of movable structure three-layer Si structure acceleration chips is fabricated. Cell samples is tested,bonding shear strength is more than 20MPa and hemeticity is less than 1. 0 ×10^- 10Pa·m3/s,which meets requirement for fields such as aviation,industry and consumptive device.

关 键 词：微机电系统 三层硅 加速度计 苯并环丁烯 键合 毛细作用 

分 类 号：TN305.9[电子电信—物理电子学]