势阱势垒宽度对GaAs/AlGaAs对称DBS RTD NDR特性的影响  

Impact of Barrier and Well Widths on Negative Differential Resistor Characteristic of Symmetric Double Barriers RTD Based on GaAs/AlGaAs

作　　者：孟晓[1] 张海鹏[1] 林弥[1] 余育新[1] 宁祥[1] 吕伟锋[1] 李阜骄 王利丹[1] 余厉阳[1] 王彬[1] 

机构地区：[1]杭州电子科技大学电子信息学院,杭州310018

出　　处：《电子与封装》2015年第3期38-43,共6页Electronics & Packaging

基　　金：国家自然科学基金(61302009);浙江省研究生科研创新基金(2014KYJJ026)

摘　　要：目前共振隧穿二极管(RTD)多值逻辑电路研究采用多个MOSFETs组合,以逼近RTD特性,这是现有逻辑功能验证的不足。针对该问题,通过建立对称双势垒RTD电子输运的解析模型,进而采用SILVACO TCAD对Ga As/Al Ga As基对称DBS RTD器件的电学特性进行仿真实验研究。根据仿真实验的结果分析总结了势阱和势垒宽度对Ga As/Al Ga As基对称DBS RTD负阻特性影响的规律,并根据MVL电路设计应用的低压、低功耗、适当峰谷电流比和工艺可实现性等要求,通过大量的仿真优化实验提出采用Ga As/Al Ga As基对称DBS RTD实现多值逻辑电路设计所需的对称DBS RTD器件设计参数窗口。It is featured of negative differential resistance characteristic with two bistable states and selflocking phenomena, high-speed and low power operation. These advantages make it very suitable for applications of high-speed analog and multivalued logic circuits. Aiming to the disadvantage that the characteristic of RTD was approximated by combination of several MOSFETs for the research of MLV circuits, the principle of electron transportation in the RTD was summarized in the paper, based on which an analysis model on transportion properties of symmetric double barriers RTD was simply described. Then, electrical properties of symmetric DBS RTD device based on Ga As/Al Ga As was studied extensively by simulation experiments with SILVACO TCAD. According to discussions and analyses of the obtained experimental results, the laws in impact of barrier and well width on negative differential resistor（NDR）characteristic of the Ga As/Al Ga As based DBS RTD were generalized. By considering the requirements of low-voltage and low power, appropriate peak current ratio, process feasibly and so on for MVL circuit applications, parameters design window of the Ga As/Al Ga As based DBS RTD was put forward.

关 键 词：共振隧穿二极管 GAAS/ALGAAS 对称双势垒 势阱宽度 势垒宽度 负阻特性 

分 类 号：TN312.2[电子电信—物理电子学] TN313.2