载荷对SiC晶片抛光质量的影响  

The influence of load on SiC wafer polishing quality

作　　者：汶超 李科[1] 何文海[1] 慕蔚[1] 

机构地区：[1]天水华天科技股份有限公司,甘肃天水741000

出　　处：《中国集成电路》2015年第3期67-73,共7页China lntegrated Circuit

摘　　要：首先利用不同粒度的碳化硼研磨液对Si C晶片分别进行粗磨和细磨,然后利用金刚石微粉悬浮抛光液对晶片进行机械抛光,在此基础上进行最终的化学机械抛光。本文重点研究了化学机械抛光时,不同载荷对晶片质量的影响,并利用Taylor Surf CCI2000非接触式粗糙度检测仪来进行表征。实验结果表明:在主盘转速为60rpm,PH为11,抛光时间为120min,温度为20摄氏度的最优实验条件下,加载0.6kg/cm2的压力,初始粗糙度为17nm的晶片其粗糙度可减小至3.8nm;在一定范围内晶面的表面粗糙度随着载荷的增大而减小,材料去除率随着载荷增大而增大,当载荷增大到一定程度时候粗糙度并无明显变化。Firstly, coarse grinding and fine grinding for SiC wafer are made using different particle size of the boron carbide grinding fluid respectively, and then mechanical polishing is made by using the diamond polishing powder suspension liquid. Based on previous work, final chemical mechanical polishing is made. The influence of different load on the chip quality is mainly studied during chemical mechanical polishing and Taylor Surf CCI2000 non-con- tact roughness tester is used to characterize the results. The result shows that, under such conditions, disc speed （ 60 RPM ）, PH （ 11 ）, polishing time （ 120min ）, and temperature （ 20 degrees Celsius ）, initial roughness （ 17 nm ）of chip reduce to 3.8 nm due to load of 0.6 kg/cm2. It also shows that in a certain range surface roughness decreases with the increase of load, while material removal rate increases as the load increases, and when the load increases to a certain degree, roughness has no obvious change.

关 键 词：SIC 研磨 抛光 化学机械抛光 载荷 

分 类 号：TN305.2[电子电信—物理电子学]