SiN_x插入层对Si衬底上生长GaN薄膜晶体质量和表面形貌的影响  

Influences of SiN_x Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films

作　　者：钱慧荣 周仕忠[1] 刘作莲[1] 杨为家[1] 王海燕[1] 林志霆[1] 林云昊[1] 王文樑[1] 李国强[1] 

机构地区：[1]华南理工大学发光材料与器件国家重点实验室,广州510640

出　　处：《半导体光电》2015年第2期216-219,225,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(51372001);广东省杰出青年基金项目(S2013050613882);广东省重大科技专项(2011A080801018);广东省LED战略专项基金项目(2011A081301010;2011A081301012)

摘　　要：在Si(111)衬底上采用金属有机化合物化学气相沉积(MOCVD)技术外延生长GaN薄膜,对外延生长所得GaN薄膜的晶体结构和表面形貌进行表征,并研究SiNx插入层对GaN薄膜的晶体质量和表面形貌的影响。结果表明,在Si衬底上生长GaN薄膜过程中引入SiNx插入层可使GaN薄膜的(10-12)面的X-射线回摆曲线的半峰宽(FWHM)值从974.01减小到602.01arcsec;表面凹坑等缺陷减少、表面平整度提高。可见,SiNx插入层对在Si衬底上外延生长GaN薄膜的晶体质量和表面形貌有着重要的影响。GaN epitaxial films were grown on Si（111）substrates by metal-organic chemical vapor deposition（MOCVD）.The effects of SiNxinterlayer on the crystalline quality and the surface morphology of GaN epitaxial film were investigated.The results reveal that the crystalline quality and the surface smoothness of GaN film can be improved by introducing SiNx interlayer.The full-width at half-maximum（FWHM）value of Rocking Curve scanning along GaN（10-12）is dramatically decreased from 974.01 to 602.01 arcsec,and the pits distributed on the surface are greatly reduced with the growth of SiNx interlayer.Conclusively,the SiNx interlayer has remarkable influence on the crystalline quality and the surface morphology of the GaN films grown on Si substrate.

关 键 词：SI衬底 GAN薄膜 SiNx插入层 MOCVD 

分 类 号：O484[理学—固体物理]