偏置条件对NPN型锗硅异质结双极晶体管电离辐射效应的影响  

Bias effects on total ionizing dose radiation response of NPN silicon-germanium hetero-junction bipolar transistors

作　　者：刘默寒 陆妩[1,2] 马武英[2] 王信[2] 郭旗[2] 何承发[2] 姜柯[2] 

机构地区：[1]新疆大学物理科学与技术学院乌鲁木齐830046 [2]中国科学院新疆理化技术研究所乌鲁木齐830011

出　　处：《核技术》2015年第6期36-42,共7页Nuclear Techniques

摘　　要：本文研究了不同偏置条件下国产商用NPN型锗硅异质结双极晶体管(Silicon germanium hetero-junction bipolar transistors,SiGe HBTs)在60Coγ辐射环境中电离辐照响应特性和变化规律。实验结果表明,在0.8 Gy(Si)·s-1剂量率辐照下,总累积剂量达到1.1×104 Gy(Si)时,发射结反向偏置条件下60Coγ射线辐照对SiGe HBTs造成的损伤最大,零偏次之,正偏损伤最小;经过一定时间的退火后,零偏恢复程度最小,而正偏和反偏时的恢复趋势以及程度相同。分析了不同偏置状态下其电离辐照敏感参数随累积总剂量以及退火时间的变化关系,讨论了引起电参数失效的潜在机理。Background： Silicon germanium hetero-junction bipolar transistors （SiGe HBTs） technology has been considered to be one of the promising candidate for future space applications due to its exciting built-in tolerance of total ionizing dose （TID） radiation and displacement damage （DD） performance. Purpose： The bias effects on total ionizing dose radiation response of the NPN commercial SiGe HBTs produced domestic were investigated with the 6~Co 7 ray under the different bias of Emitter-Base Junction. And the potential mechanisms of the different responses of the radiation under different bias are analyzed. Methods： The devices were mounted in the irradiation boards with different bias conditions during the irradiation and annealing process, and irradiated to a maximum total ionizing dose level of 11 kGy（Si）. The electrical parameters including Gummel characteristics and direct current gain of the devices were measured with Keithley 4200-SCS Semiconductor Parameter Analyzer removed from the irradiation room within 20 rain at room temperature before and after each specified value of accumulated dose. Results： The radiation sensitive electric parameters of the SiGe HBTs are base current and current gain. And, the damage of the devices with reverse bias is greater than that of zero bias, the degradation of the forward bias is the smallest. Conclusion： The difference of the radiation response under different bias conditions are due to the different amounts of the oxide and interface trap charge induced by the radiation under diverse electric field.

关 键 词：锗硅异质结双极晶体管 总剂量效应 偏置条件 退火 

分 类 号：TL82[核科学技术—核技术及应用] O571.33[理学—粒子物理与原子核物理]