4H-SiC MESFET新结构的特性研究  

Study on Characteristics of a New Structure of 4H-SiC MESFET

作　　者：彭沛[1] 陈勇[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《微电子学》2015年第3期404-407,共4页Microelectronics

摘　　要：提出了一种具有阶梯沟道和浮空金属板的新型4H-SiC MESFET结构。在双凹型4HSiC MESFET的栅漏之间加入浮空金属板,并引入阶梯沟道,减少了靠近漏端的栅边缘的电场积聚,提高了击穿电压。对提出的结构进行二维数值模拟,结果表明,该结构的击穿电压达到232V,相对于双凹型4H-SiC MESFET的击穿电压103 V,提高了125%,其饱和漏电流相对提高了4.1%,截止频率为15.1GHz,最大振荡频率为69.2GHz。该结构在击穿电压提高125%时,没有严重降低截止频率。A novel 4H-SiC metal semiconductor field effect transistor （MESFET） with step channel and floating metal plate was proposed. A step channel and a floating metal plate were added between the gate and drain of the double-recessed 4H-SiC MESFET, which had reduced the electric field accumulation at the edge of gate near the drain, and had increased the breakdown voltage. Two dimensional numerical simulation was performed to the proposed structure. The results showed that the breakdown voltage of the structure was 232 V compared to 103 V of the double-recessed structure, so it was increased by 125 %, and the saturated leakage current was increased by 4.1%. The cut-off frequency（fT） was 15. 1 GHz, and the maximum oscillation frequency（fmax） was 69.2 GHz. The simulation results revealed that the proposed structure had achieved a 125 % improvement in breakdown voltage without significantly reducing its cut-off frequency.

关 键 词：4H-SIC 金属半导体场效应晶体管 击穿电压 

分 类 号：TN386.3[电子电信—物理电子学]