3mm单平衡混频器芯片  

3 mm Single-Balanced Mixer Chip

作　　者：赵宇[1] 刘永强[1] 魏洪涛[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2015年第7期485-488,共4页Semiconductor Technology

摘　　要：为满足3 mm收发系统的小型化需求,采用In P高电子迁移率晶体管（HEMT）工艺,设计并制造了一款3 mm单平衡混频器芯片。该单平衡混频器芯片采用了反向并联肖特基二极管对（APDP）和三线耦合Marchand巴伦结构,在获得精确的肖特基二极管非线性模型和巴伦电磁场S参数模型的基础上,对混频器进行了电路设计。最终获得了良好的工作带宽、变频损耗与隔离度指标,在片测试结果显示,该芯片射频、本振频率为82-100 GHz,变频损耗小于9 d B,本振（LO）-射频（RF）隔离度大于20 d B,中频带宽为0.1-18 GHz,整体芯片尺寸为1.1 mm×1.0 mm。In order to satisfy the needs of the 3 mm transceiver system,a 3 mm single-balanced mixer chip was designed and fabricated with In P high electron mobility transistor（ HEMT） process. The single-balanced mixer chip used anti-paralleled diodes pair（ APDP） and three line coupled Marchand Balun structure. Based on the accurate non-linear model of the Schottky diode and the electromagnetic S parameters model of the Balun,the mixer circuit was designed. In conclusion,the improved operation bandwith,conversion loss and the isolation results were achieved. The measurement results show that the RF frequency and the LO frequency operate from 82 GHz to 100 GHz,with the conversion loss less than 9 d B and LO-RF isolation greater than 20 d B. The IF bandwidth is from 0. 1 GHz to 18 GHz. The chip size is only 1. 1 mm×1. 0 mm.

关 键 词：磷化铟 3 MM 单平衡混频器 巴伦 肖特基二极管 

分 类 号：TN773[电子电信—电路与系统]