提高压力传感器过载响应速度的研究  

Study on Improvement of Overload Response Rate of Pressure Sensor

作　　者：李颖[1] 张治国[1] 刘剑[1] 张哲[1] 张娜[1] 郑东明[1] 梁峭[1] 祝永锋[1] 

机构地区：[1]沈阳仪表科学研究院有限公司,辽宁沈阳110043

出　　处：《仪表技术与传感器》2015年第6期14-16,19,共4页Instrument Technique and Sensor

基　　金：国家高技术研究发展计划(863计划)项目(2014AA042001)

摘　　要：介绍了一种提高硅电容压力传感器过载回零响应速度的方法,通过在传感器硅可动极板上设计、制作快速导油微结构,实现了传感器过载回零响应速度的大幅度提升,解决了传感器设计中一项关键技术难题,使硅电容压力传感器真正达到了实用化程度,满足了工业现场的实际使用要求。Silicon capacitive pressure sensor is a new type of structure force sensor. Compared with conventional silicon technology,silicon capacitive sensor has significant advantages in measurement accuracy,stability and reliability. A silicon capacitive sensor overload zeroing method to improve the response speed was presented in this paper. The designing of an oil lead tank structure in the silicon capacitive sensor movable guide plates enhanced the overload back zero response speed of the sensor greatly. This technique solves the key technical problem in the capacitive sensor design,so that the capacitive sensor achieves the practical degree and meets the actual requirements of industrial application.

关 键 词：硅电容 传感器 导油槽 响应速度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]