电子回旋共振氮等离子体氧化后退火对4H-Si CMOS电容TDDB特性的影响  

Effects of Electron Cyclotron Resonance Nitrogen Plasma Post-oxidation Annealing on the TDDB Characteristics of 4H-SiC MOS Capacitors

作　　者：汤斌[1] 李文波[1] 刘冰冰[1] 刘道森[1] 秦福文[2] 王德君[1] 

机构地区：[1]大连理工大学电子信息与电气工程学部电子科学与技术学院,辽宁大连116024 [2]大连理工大学三束材料改性教育部重点实验室,辽宁大连116024

出　　处：《固体电子学研究与进展》2015年第2期191-196,201,共7页Research & Progress of SSE

摘　　要：SiC MOS器件氧化膜可靠性是SiC器件研究中的重要方面。本文对4H-SiC MOS结构进行电子回旋共振(ECR)氮等离子体氧化后退火工艺处理,采用阶跃电流经时击穿以及XPS分析的方法对其氧化膜稳定性进行了电学以及物理性质方面上的分析。经分析氮等离子体处理8min的样品击穿时间和单位面积击穿电荷量都有了明显提高,并且早期失效比率有了明显降低。实验结果表明,经过适当时间的处理,ECR氮等离子体氧化后退火工艺可以有效地降低界面缺陷的密度,提高界面处激活能,从而提高绝缘膜耐受电流应力的能力。Reliability of SiC MOS oxide layer is a crucial problem in the research of SiC MOS devices.Effects of electron cyclotron resonance（ECR）nitrogen plasma post-oxidation annealing（POA）on the breakdown characteristics of the dielectric layer in 4H-SiC MOS structures were investigated by using stepped-current time-dependent dielectric breakdown technique and X-ray photoelectro spectroscope XPS analysis.Samples being processed for 8minutes achieved the best results that is,the time to breakdown and charge to breakdown increased greatly,and the proportion of early failures also decreased.The results show that for an appropriate time,ECR nitrogen plasma POA process could effectively lower the density of interface traps,resulting in a higher enthalpy of activation,which in turn improves the ability to sustain current stress.

关 键 词：碳化硅 金属氧化物半导体电容 氧化膜经时击穿 氮等离子体氧化后退火 

分 类 号：TN304.2[电子电信—物理电子学]