沉积温度对PECVD制备微晶硅薄膜性质的影响  

Influence of Deposition Temperature on Properties of μc-Si Thin Films Prepared by PECVD

作　　者：王生钊[1] 黄奇瑞 卢景霄[2] 石明吉[1] 陈兰莉[1] 郭新峰[1] 

机构地区：[1]南阳理工学院电子与电气工程学院,南阳473004 [2]郑州大学教育部材料物理重点实验室,郑州450052

出　　处：《材料导报（纳米与新材料专辑）》2015年第1期201-204,共4页

基　　金：河南省科技攻关项目(132102210144);国家高技术产业计划项目(发改办高技072490);河南省基础与前沿基础研究项目(072300410310)

摘　　要：采用PECVD（等离子体增强化学气相沉积）技术在不锈钢或玻璃衬底上制备微晶Si（硅）薄膜，研究沉积温度对PECVD法所制备的微晶硅薄膜性质的影响。从实验结果中可以看出，随着沉积腔内沉积温度的不断升高，微晶硅薄膜晶化率、晶粒尺寸在200-400℃范围内不断增加。当沉积温度为400℃时，薄膜的晶化率、晶粒尺寸得到显著提高，当沉积温度超过500℃时，薄膜的晶化率、晶粒尺寸反而略有下降。在本实验室条件下，沉积温度为400℃时十分有利于硅薄膜由非晶硅转化为微晶硅。Plasma enhanced chemical vapor deposition （PECVD） was used to prepare microcrystalline silicon thin films on glass and stainless steel substrates. Influences of temperature in deposition chamber on the crystallization rate and grain size of the Si thin films were studied. The results shows that the crystallization rate and grain size of microcrystalline silicon thin film are increased as deposition temperature rises gradually in the range of 200- 400 ℃. When deposition temperature is 400 ℃, the grain size of the films becomes larger suddenly and the crystallization rate increased significantly. When deposition temperature is beyond 500 ℃, the film crystallization rate and grain size decrease slightly. Therefore, under the conditions in our laboratory, the film deposition temperature of 400 ℃ is favor to the conversion of amorphous sihcon film into microcrystalline silicon films.

关 键 词：PECVD 沉积温度 微晶硅薄膜 晶化率 晶粒尺寸 

分 类 号：TM914.42[电气工程—电力电子与电力传动]