单轴应变Si n型金属氧化物半导体场效应晶体管源漏电流特性模型  

A Model of channel current for uniaxially strained Sin-channel metal-oxide-semiconductor field-effect transistor

作　　者：吕懿[1] 张鹤鸣[1] 胡辉勇[1] 杨晋勇[2] 殷树娟[3] 周春宇[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件重点实验室,西安710071 [2]北京精密机电控制设备研究所,北京100076 [3]北京信息科技大学理学院,北京100192

出　　处：《物理学报》2015年第19期272-277,共6页Acta Physica Sinica

基　　金：教育部博士点基金(批准号:JY0300122503);中央高校基本业务费(批准号:K5051225014;K5051225004)资助的课题~~

摘　　要：本文在建立单轴应变Si n型金属氧化物半导体场效应晶体管迁移率模型和阈值电压模型的基础上,基于器件不同的工作区域,从基本的漂移扩散方程出发,分别建立了单轴应变Si NMOSFET源漏电流模型.其中将应力的影响显式地体现在迁移率和阈值电压模型中,使得所建立的模型能直观地反映出源漏电流特性与应力强度的关系.并且对于亚阈区电流模型,基于亚阈区反型电荷,而不是采用常用的有效沟道厚度近似的概念,从而提高了模型的精度.同时将所建模型的仿真结果与实验结果进行了比较,验证了模型的可行性.该模型已经被嵌入进电路仿真器中,实现了对单轴应变Si MOSFET器件和电路的模拟仿真.The channel current model is used to analyse the behavior of uniaxially strained Si n-channel metal-oxide-semiconductor field-effect transistor （NMOSFET） device and circuit. With the development of mobility and threshold voltage model, starting from the basic drift-diffusion equation, the channel current model for an uniaxially strained Si NMOSFET device is developed under different bias conditions. Especially, the stress intensity is explicitly included in the mobility and threshold voltage model, and this makes the model convenient to directly reflect the relationship between the device channel current and the stress intensity. Moreover, in terms of the subthreshold current model, the charge of weak inversion rather than the normal effective channel thickness approximation is involved. In this way, the model accuracy can be improved. Furthermore, this model is implemented by using verilogA language and is applied to the strained Si circuit’s SPICE simulation, the model parameters extraction tool ParamPlus＋＋is developed at the same time. As a result, the simulation of uniaxial-strained Si NMOSFET device and circuit can be achieved; the simulation data fits the experimental results or TCAD simulation results very well, and this proves the accuracy of the model. Meanwhile the simulation results of the threshold voltage and subthreshold current with respect to stress intensity are obtained and analyzed. The results show that with increasing stress intensity the subthreshold current is increased while the threshold voltage is decreased.

关 键 词：单轴应变Si n型金属氧化物半导体场效应晶体管 迁移率 阈值电压 

分 类 号：O469[理学—凝聚态物理]