离子注入对高质量4H-SiC外延片ESR谱的影响  

ESR results of high-quality 4H-SiC epitaxial layer influenced by ions implantation

作　　者：程萍[1] 郝建民[2] 

机构地区：[1]宁波大红鹰学院,浙江宁波315175 [2]中电集团第46研究所,天津300220

出　　处：《兵器材料科学与工程》2015年第6期45-47,共3页Ordnance Material Science and Engineering

基　　金：浙江省青年基金(LQ14F040004)

摘　　要：利用电子自旋共振仪分析了C+、Si+对高质量4H-Si C外延片中本征缺陷ESR谱的影响。结果表明:与原始样品相比,C+、Si+离子注入不仅降低了外延片中的本征缺陷浓度,同时可导致本征缺陷种类发生变化;Si+注入使样品中本征缺陷浓度降低约61%,而C+注入使本征缺陷浓度降低达63%以上。After C＋、Si＋ions implantation,the intrinsic defects in high-quality 4H-Si C epitaxial layer were detected based on ESR.The results show that the concentration and type of intrinsic defects are changed after ions implantation. The concentration of intrinsic defects in 4H-Si C is reduced by more than 63% because of C＋emptied into and that is about 61% with Si＋.

关 键 词：4H-SIC 离子注入 本征缺陷 

分 类 号：TN305.3[电子电信—物理电子学]