阳极氧化铝作缓冲层的Si基GaN生长  

GaN Growth on Si Substrate Using Anodic Alumina as Buffer Layer

作　　者：陈鹏[1] 江若琏[1] 王军转[1] 赵作明[1] 梅永丰[1] 沈波[1] 张荣[1] 吴兴龙[1] 顾书林[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《高技术通讯》2002年第4期52-54,共3页Chinese High Technology Letters

基　　金：国家基础研究计划 (G2 0 0 0 0 6 83);国家自然科学基金 ( 6 99870 0 1;6 9976 0 14 ;6 980 6 0 0 6 )资助项目

摘　　要：尝试了Si基上生长GaN外延层的一种新的缓冲层材料 -阳极氧化铝。在Si(111)衬底上电子束蒸发铝膜 ,经阳极氧化后放入MOCVD系统中退火 ,然后进行GaN外延生长。对材料的微结构和电学性质进行了测量和分析 ,并将得到的GaN材料制备成光导型的紫外光电探测器 ,器件在 330～ 380nm紫外光区域有明显响应 ,最高响应度为 3.5A/W (5V偏压 )。A new anodic alumina buffer layer was used in the growth of GaN on Si. Aluminia films were deposited on Si (111) substrates by electron beam evaporation. After anodizing process of the film, the samples were annealed and GaN were grown in situ in the MOCVD system. The micro- structure and the electrical property of the materials were measured and discussed. Photo- conductive ultraviolet detectors were fabricated with these materials. The spectral response range of these detectors was between 330～380nm. The max responsivity is 3 5A/W at 5V bias.

关 键 词：SI基 GaN 阳极氧化铝 缓冲层 紫外光电探测器 硅衬底 氮化钙 晶体生长 半导体材料 

分 类 号：TN304.055[电子电信—物理电子学]