扩散掺杂的p型ZnO薄膜的光学性质研究  

Optical Properties Investigation of p-Type ZnO Film Based on Doping by Diffusion

作　　者：陈芳[1] 房丹[1] 王双鹏[2] 方铉[1] 唐吉龙[1] 赵海峰[2] 方芳[1,3] 楚学影[1] 李金华[1] 王菲[1] 王晓华[1] 刘国军[1] 马晓辉[1] 魏志鹏[1] 

机构地区：[1]高功率半导体激光国家重点实验室,长春理工大学光电工程学院,吉林长春130022 [2]发光学及应用国家重点实验室,中国科学院长春光学精密机械与物理研究所,吉林长春130033 [3]南昌大学,江西南昌330047

出　　处：《光谱学与光谱分析》2015年第7期1787-1790,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金项目(61076039,61204065,61205193,61307045,61404009,61474010);高等学校博士学科点专项科研基金项目(20112216120005);吉林省科技发展计划项目(20121816,201201116);高功率半导体激光国家重点实验室基金项目(9140C310104110C3101,9140C310102130C31107,9140C3101024C310004,9140C310101120C031115)资助

摘　　要：采用原子层沉积技术(atomic layer deposition)在InP衬底上生长ZnO薄膜,并在不同温度下(500和700℃)进行热退火处理,将P掺杂进入ZnO,得到p型ZnO薄膜。样品的光学特性通过光致发光光谱(photoluminescence,PL)来测定,得出热退火温度是影响P扩散掺杂的重要因素,低温PL光谱中,700℃热退火1h样品的光谱展现出四个与受主相关的发射峰:3.351,3.311,3.246和3.177eV,分别来自受主束缚激子的辐射复合(A°X)、自由电子到受主的发射(FA)、施主受主对的发射(DAP)以及施主受主对的第一纵向声子伴线(DAP-1LO),计算得到受主束缚能为122meV,与理论计算结果一致。通过热扩散方式实现了ZnO薄膜的p型掺杂,解决了制约ZnO基光电器件发展的主要问题,对ZnO基半导体材料及其光电器件的发展有重要意义。The main purpose of this paper is to investigate the optical properties of p-type ZnO film based on P doping.ZnO film was grown by Atomic layer deposition（ALD）on InP subsrate in this experiment,and phosphorus diffused into ZnO lattice by annealing treatment at different temperature（500,700 ℃）.The optical properties of samples were investigated by photoluminescence（PL）spectroscopy,which indicated that the annealing temperature is the important factor influencing the phosphorus diffusion doping.The low-temperature PL spectra of the sample which annealed at 700℃for 1hexhibited acceptor related emission peaks located at 3.351,3.311,3.246 and 3.177 eV,which were attributed to A°X,FA,DAP and DAP-1LO,respectively.The acceptor binding energy is estimated to be about 122 meV,which is agreed with the theoretic values in phosphorus-doped ZnO films.In this paper,through thermal diffusion method to realize the p-type doped ZnO thin films,it solved the main problems which limited the development of ZnO based optoelectronic devices,and has an important significance for the development of the ZnO semiconductor materials and ZnO based photoelectric device.

关 键 词：扩散掺杂 P型ZNO P掺杂 原子层沉积 光致发光 

分 类 号：O472.3[理学—半导体物理]