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作 者:范元媛[1,2] 周翊[1,2] 刘广义[1,2] 宋兴亮[1,2] 单耀莹[1,2] 王倩[1,2] 赵江山[1,2]
机构地区:[1]中国科学院光电研究院,北京100094 [2]北京市准分子激光工程技术研究中心,北京100094
出 处:《中国激光》2016年第2期1-6,共6页Chinese Journal of Lasers
基 金:国家自然科学基金(61405202);北京市科技专项(Z141104004414069)
摘 要:短波长、高光子能量的Ar F准分子激光在集成电路光刻、材料加工、激光医学等领域具有重要的应用。结合线宽压窄技术方案设计了193 nm Ar F准分子激光器复合腔结构,理论分析了复合腔结构能量提升的原理。针对准分子激光器的长腔特性,提出了实现其复合腔窄带激光模式锁定的解决方案,并进行了实验验证。与通常插入色散元件的单窄带腔相比,锁定后的准分子激光复合腔在输出线宽基本不变的情况下能量提高了4.02倍,激光效率大幅提升,能量稳定性也大幅优化。ArF excimer lasers characterized by short wavelength and high photon energy have important applications in the field of integrated circuit lithography, material processing, laser medicine, and so on. Structure of the compound cavity 193 nm ArF excimer laser is designed based on the linewidth narrowing techniques. Principles of the compound cavity laser are theoretically analyzed. Based on the characteristics of long cavity length in excimer laser system, the solutions for achieving effective mode-locking in compound cavity are proposed and experimentally verified. The laser output with nearly the same linewidth as the narrow-band cavity with dispersive elements and 4.02 times large energy is obtained. The laser efficiency and the energy stability are greatly improved as well.
分 类 号:TN248[电子电信—物理电子学]
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