响应面方法的硅刻蚀工艺优化分析（英文）  

Optimization of silicon etching process using response surface method

作　　者：付文婷[1] 梁峭[1] 崔可夫[1] 石天立 张娜[1] 郑东明[1] 唐慧[1] 孙海玮[1] 

机构地区：[1]沈阳仪表科学研究院有限公司,沈阳110043

出　　处：《强激光与粒子束》2016年第6期46-50,共5页High Power Laser and Particle Beams

摘　　要：利用响应面分析方法优化了用于压力传感器硅敏感芯体的刻蚀操作条件。主要考虑了温度、KOH浓度和腐蚀时间三个操作参数,将它们的范围分别设定为40~60℃,0.4~0.48mol/L和5~12.5h,并设定各向异性腐蚀速率为响应值。通过建立二次方模型,分析这些参数的单独影响以及多个操作条件之间对腐蚀速率的相互交叠作用。分析结果表明：模型可以精确预测99%的响应值,相比于腐蚀时间,溶液浓度和工作温度对刻蚀速率的影响更为明显。In this paper, the response surface methodology（RSM） is applied to optimizing the operatingconditions of silicon etching for pressure sensor fabrication. Three operating parameters, the temperature, theKOH concentration and the etching time are considered in this study, and the ranges of them are 40-60℃, 0.40.48 mol/L and 5-12.5 h, respectively. A quadratic model is established to describe the anisotropic etching rateas the response value, and the individual effects of these operating parameters and the combined effects of multiple operating conditionson etching rate are examined.

关 键 词：KOH各向异性 响应面分析方法 刻蚀速率 传感器 

分 类 号：TN31[电子电信—物理电子学]